Semiconductor processing methods of forming capacitor arrays on a substrate

ABSTRACT

Semiconductor processing methods include forming a plurality of patterned device outlines over a semiconductor substrate, forming electrically insulative partitions or spacers on at least a portion of the patterned device outlines, and forming a plurality of substantially identically shaped devices relative to the patterned device outlines. Individual formed devices are spaced from at least one other of the devices by a distance no more than a width of one of the electrically insulative spacers. In such manner, device pitch is reduced by almost fifty percent. According to one aspect, elongated electrically conductive lines are formed. According to another aspect, capacitors are formed which, according to a preferred embodiment form part of a dynamic random access memory (DRAM) array.

RELATED PATENT DATA

This patent resulted from a divisional application of U.S. patentapplication Ser. No. 09/036,701, filed Mar. 6, 1998, which is adivisional application of U.S. patent application Ser. No. 08/742,895,filed Nov. 1, 1996, now U.S. Pat. No. 5,998,256.

TECHNICAL FIELD

This invention relates to semiconductor processing methods of formingdevices on or over a substrate, forming device arrays on or over asubstrate, forming conductive lines on or over a substrate, and formingcapacitor arrays on or over a substrate. The invention also relates tosemiconductor device arrays, and in particular to series of conductivelines and capacitor arrays.

BACKGROUND OF THE INVENTION

Circuit devices which are fabricated on or over semiconductor waferstypically undergo one or more photolithographic steps during formation.During such photolithographic steps, device features can be etched usingconventional techniques. The spacing between such devices is importantbecause often times adjacent devices must be electrically isolated fromone another to avoid undesirable shorting conditions.

One of the limitations on device spacing stems from limitations inherentin the photolithographic process itself. In the prior art, devices aregenerally spaced only as close as the photolithographic limit willpermit.

By way of example and referring to FIGS. 1 and 2, a semiconductor waferfragment is indicated generally by reference numeral 25. Fragment 25includes a substrate 29 atop which a material 28 is provided. Aplurality of patterned masking layers 26 are formed atop material 28.

Referring to FIG. 3, material 28 is anisotropically etched to form lines30 atop substrate 29. As shown, individual lines have respective widthsL₁ which constitute the minimum photolithographic feature size availablefor a line. Typically, a separation S₁ separates adjacent lines acrossthe substrate as shown. Such dimension is typically only slightly largerthan L₁ but could be the same as L₁. The term “pitch” as used in thisdocument is intended to be in its conventional usage, and is defined asthe distance between one edge of a device and the corresponding sameedge of the next adjacent device. Accordingly and in the illustratedexample, the pitch between adjacent lines P₁ (i.e., from the leftillustrated edge of one line to the left illustrated edge of the nextimmediately adjacent line) is equal to the sum of L₁ and S₁.

As integrated circuitry gets smaller and denser, the need to reducespacing dimensions or pitch, such as S₁ and P₁, becomes increasinglyimportant. This invention grew out of the need to reduce the size ofintegrated circuits, and particularly the need to reduce spacingdimensions and pitches between adjacent devices over a semiconductorwafer.

SUMMARY OF THE INVENTION

The invention includes semiconductor processing methods and relatedintegrated circuitry in which a plurality of patterned device outlinesare formed over a semiconductor substrate. Electrically insulativepartitions or spacers are then formed on at least a portion of thepatterned device outlines, after which a plurality of substantiallyidentically shaped devices are formed relative to the patterned deviceoutlines. Individual formed devices are spaced from at least one otherof the devices by a distance substantially no more than a width of oneof the electrically insulative spacers.

According to one aspect of the invention, elongated electricallyconductive lines are formed. According to another aspect of theinvention, capacitors are formed. In one preferred implementation of thelatter aspect, a pair of adjacent capacitor containers are formed over asubstrate by etching a first capacitor container opening having at leastone sidewall. An electrically insulative spacer is formed over thesidewall. A second capacitor container opening is etched selectivelyrelative to the spacer. Capacitors are then formed in the capacitorcontainers in a manner such that adjacent capacitors have a separationdistance which is substantially no greater than the width of the spacerbetween the adjacent capacitors.

A novel masking layout is provided which allows capacitors to be formedin a manner which reduces device pitch by almost 50%. Such isparticularly adaptive for use in fabrication of DRAM circuitry.

DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a top plan view of a prior art semiconductor wafer fragmentatop which a plurality of masking layers are formed, and is discussed inthe “Background” section above.

FIG. 2 is a side sectional view of the FIG. 1 prior art semiconductorwafer taken along line 2—2 in FIG. 1.

FIG. 3 is a view of the FIG. 1 prior art semiconductor wafer fragment ata processing step subsequent to that shown in FIG. 1.

FIG. 4 is a top plan view of a semiconductor wafer fragment atop which aplurality of masking layers are formed at one processing step inaccordance with one aspect of the invention.

FIG. 5 is a side view of the FIG. 4 semiconductor wafer fragment.

FIG. 6 is a view of the FIG. 5 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 5.

FIG. 7 is a view of the FIG. 5 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 6.

FIG. 8 is a view of the FIG. 5 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 5 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 8.

FIG. 10 is a top plan view of the FIG. 9 semiconductor wafer fragment.

FIG. 11 is a view of a semiconductor wafer fragment at one processingstep in accordance with another aspect of the invention.

FIG. 12 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 11.

FIG. 13 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 12.

FIG. 14 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 13.

FIG. 15 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 14.

FIG. 16 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 15.

FIG. 17 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 16.

FIG. 18 is a view of the FIG. 11 semiconductor wafer fragment at aprocessing step subsequent to that shown by FIG. 17.

FIG. 19 is a top plan view of a portion of a semiconductor mask layoutin accordance with one aspect of the invention.

FIG. 20 is a top plan view of the FIG. 19 semiconductor mask layout witha portion highlighted for purposes of discussion.

FIG. 21 is a view of a portion of the FIG. 20 semiconductor mask layouthighlighted portion.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring initially to FIGS. 4 and 5, a plurality of patterned deviceoutlines 32 are photolithographically formed over a semiconductivesubstrate 34. In the context of this document, the term “semiconductivesubstrate” is defined to mean any construction comprising semiconductivematerial, including, but not limited to, bulk semiconductive materialssuch as a semiconductive wafer (either alone or in assemblies comprisingother materials thereon), and semiconductive material layers (eitheralone or in assemblies comprising other materials). The term “substrate”refers to any supporting structure, including, but not limited to, thesemiconductive substrates described above. In this illustrated andpreferred example, the material constituting outlines 32 is preferablyof the type which can be etched selectively relative to substrate 34.Such outlines define areas over substrate 34 in which conductive linesare to be formed. Such patterned device outlines are, dimension-wise,substantially the same as those set forth with regard to patternedmasking layers 26 in FIGS. 1-3.

Referring to FIG. 6, an electrically insulative material such as SiO₂ orSi₃N₄ is formed over lines 32 and substrate 34 and subsequentlyanisotropically etched to provide a plurality of sidewall spacers 36 onat least a portion, and preferably all, of pattern device outlines 32.For purposes of the ongoing discussion, patterned device outlines 32define male patterns between which female patterns 38 are also formed.Accordingly, an array of alternating male/female patterns are formedover the substrate wherein sidewall spacers 36 are formed in femalepatterns 38.

Referring to FIG. 7, and after forming sidewall spacers 36, malepatterns or patterned device outlines 32 are removed as by suitableetching techniques. The etch preferably etches device outlines 32relative to the material forming spacers 36 and the substrate 34. Suchleaves behind a plurality of upstanding sidewall spacers 36 whicheffectively define thin electrically insulative partitions between whicha plurality of devices are to be formed. As shown, the distance orlateral spacing between adjacent spacers varies from spacer-to-spacer.According to one preferred aspect, a plurality of spaces 40 a through 40i are provided wherein adjacent spaces, such as 40 a and 40 b differslightly in lateral width dimension, while alternate spaces such as 40 aand 40 c have as shown substantially the same lateral width dimension.

Referring to FIG. 8, a conductive material 42 is formed over substrate34 and sidewall spacers 36 and preferably completely fills spaces 40 athrough 40 i. An example material for layer 32 is conductively dopedpolysilicon.

Referring to FIG. 9, conductive material 42 is etched back as bysuitable methods such as a chemical-mechanical polish (CMP) or dryetching as well known in the art. Such forms a plurality ofsubstantially identically shaped circuit devices relative to thepatterned device outlines 32 (FIG. 6). In this embodiment, such devicesare conductive lines 44 which are spaced laterally from one another adistance which is no greater than a width of one of the electricallyinsulative sidewall spacers 36 therebetween. As so formed, immediatelyadjacent conductive lines of the plurality of lines formed have a pitchP₂ which is substantially no greater than a lateral line width L₂ plus awidth W₂ of the spacer 36 which is positioned between the adjacentlines. As compared to the pitch P₁ (FIG. 3) of the prior circuitdevices, pitch P₂ represents a reduction in pitch which approaches fiftypercent. Such achieved pitch reductions are without regard to the priorart photolithographic spacing constraints imposed on semiconductorprocessing. As mentioned above, the spacing between adjacent spacersvaries from spacer-to-spacer. Accordingly, the pitch P₂ would vary aswell. It is possible for the spacing between adjacent spacers to beuniform, however, so that the pitch remains constant across thesubstrate.

Referring to FIG. 10, a top plan view of substrate 34 is shown.Conductive lines 44 collectively define a series of conductive lineswhich in turn define a device array 46 of substantially identicallyshaped devices. Array 46 includes the plurality of upstanding spacers 36and the conductive lines 44 formed intermediate the spacers. Inaccordance with a preferred aspect of the invention and as describedwith reference to FIG. 9 above, adjacent lines have a pitch which issubstantially no greater than about the distance between a pair ofadjacent spacers (corresponding to the line width) plus the width of thespacer therebetween. In the illustrated example, conductive lines 44 areelongated and adjacent conductive lines have different lateral linewidths. Additionally, alternate lines have substantially equal lateralline widths. Such variation in line width stems from the manner in whichthe anisotropically etched sidewall spacers 36 are provided over thesubstrate, and in particular the lateral spacing of device outlines 32(FIG. 5). As mentioned above, it is possible for the line widths to besubstantially equal over the entire substrate.

Referring still to FIG. 10, a dashed line 48 traverses device array 46.Individual elongated conductive lines 44 are formed over substrate 34transversely along line 48. Respective alternate devices along line 48have a substantially common width dimension therealong and respectiveadjacent devices have a different width dimension therealong.

Referring collectively to FIGS. 11-18, a semiconductor processing methodof forming a plurality of alternate devices on a substrate in accordancewith the above-described principles is described. According to apreferred aspect of the invention, the devices comprise capacitors, andeven more preferably comprise capacitors which form part of a dynamicrandom access memory (DRAM) device. Circuit devices other than theillustrated and described conductive lines and capacitors can befabricated in accordance with the invention.

In accordance with one preferred embodiment, a plurality of capacitorcontainer openings are etched over a substrate in two separate etchingsteps. Thereafter, corresponding DRAM capacitors are formed within thecontainer openings according to known processing techniques. As soformed, and in accordance with the above-described spacer formation andpitch reduction concepts, a plurality of pairs of adjacent capacitorsare formed in respective adjacent capacitor containers which areseparated by no more than anisotropically etched, electricallyinsulative sidewall spacers as will become evident below.

Referring specifically to FIG. 11, a semiconductor wafer fragment inprocesses shown generally at 50 and includes a layer of material 52which may or not may be semiconductive. Transistors forming part of thepreferred DRAM circuitry array are not shown, but are formed preferablyelevationally below the capacitors described hereafter. Otherelevational configurations as between transistors and capacitors arepossible. A layer 54, preferably of borophosphosilicate glass (BPSG), isformed over material 52 to a thickness preferably around two microns. Alayer of photoresist material 58 formed over the substrate and patternedto define a plurality of bit line contact openings 56 over waferfragment 50. The illustrated and preferred photoresist material 58defines a plurality of patterned device outlines 60 over the substrate.Patterned outlines 60 in turn define individual areas over the substratefor supporting a plurality of capacitors to be formed as describedbelow. Preferably, the individual areas defined by outlines 60 supporttwo such capacitors as will be apparent.

Referring to FIG. 12, layer 54 is anisotropically etched to form bitline contact openings 62 into layer 54. Photoresist material 58 is thenstripped and an insulating material is formed over the substrate andinto openings 62 and subsequently anisotropically etched to form theillustrated sidewall spacers 64. Thereafter, bit contact material,preferably conductively doped polysilicon, is formed over the substrateand into openings 62. Such material is or may be planarized as bysuitable chemical-mechanical polishing to provide the illustrated bitline contacts or plugs 66. A plurality of contacts similar to contacts66 are formed over the substrate during the same formation steps andbound each area 60 across the substrate in the same manner as theillustrated contacts 66 bound the centermost area 60.

Referring to FIG. 13, a first set of capacitor container openingpatterns 68 are formed over the substrate and defined by photoresistmaterial 69. The device pattern set forth in FIG. 13 results from asemiconductor mask layout which is shown in FIG. 19 and discussed indetail below. FIG. 13 is a view which is taken along line 13—13 in FIG.19.

Referring to FIG. 14, a first set 70 of capacitor container openings areetched selectively relative to spacers 64 and the conductive contacts 66through layer 54. Photoresist material 69 is then stripped away.Individual capacitor containers 72 of first set 70 have at least one,and preferably more, upright sidewalls, two of which are illustrated at74, 76 respectively for each container 72. Upright sidewalls 74 asviewed in FIG. 14 coincide with and are defined by the rightmostsidewall spacer 64 which was previously formed. 61 a Referring to FIG.15, an electrically insulative material such as silicon nitride isformed over the substrate and subsequently anisotropically etchedrelative to layer 54, spacers 64, and bit line contacts 66 to formrespective partitions or spacers 78, 80. Individual areas defined byoutlines 60 are thus partitioned into two parts which are separated fromone another by non-conducting partitions 78, 80, respectively, which areformed over and cover sidewalls 74, 76 respectively. As so formed,partitions 78, 80 outline individual container openings of first set 70in which capacitors are to be formed.

Referring to FIG. 16, remaining BPSG layer 54 is selectively etched orotherwise removed relative to sidewall spacers 64, spacers or partitions78, 80, and bit line contacts 66 to define a second set 82 of capacitorcontainer openings to respective capacitor containers 84. As so etched,individual second set containers 84 and the respective openings thereofare disposed adjacent respective first set containers 72 to form a pairof containers (only one complete pair 72/84 of which is shown). Theleftmost side of FIG. 16 shows a leftmost outline 60 which includes acomplete capacitor container 84 and a portion of its paired container72. Likewise, the rightmost side of FIG. 16 shows a rightmost outline 60which includes a complete capacitor container 72 and a portion of itspaired container 84. Individual containers of a pair are separatedtherefrom by no more than the width of a non-conducting partition 80. Asdiscussed above with reference to the pitch advantages achieved withconductive lines 44 (FIGS. 9 and 10), such advantages are achievedthrough the use of spacers or partitions 80 which electrically isolateadjacent capacitors formed in respective areas 60.

Referring to FIGS. 17 and 18, electrically conductive container material86 is formed over the substrate and planarized (FIG. 18) to define aplurality of capacitor storage nodes 81 in preferred container shapes.Subsequently, capacitors are formed according to conventional formation.techniques as by provision of a dielectric layer 83 over respectivestorage nodes 81 and provision of a subsequent polysilicon layer 85thereover. As so formed, capacitors in respective partitioned parts ofthe area defined by outlines 60 are separated from immediately adjacentcapacitors or have a closest separation distance which is substantiallyno greater than the width of the partition or spacer between thecapacitors.

Referring to FIG. 19, a diagrammatic semiconductor mask layout and DRAMarray is designated generally by reference numeral 88. Layout 88 isutilized to enable the above-described container openings to beselectively, alternately formed or etched in the two described separateetching steps. For purposes of clarity, FIG. 13 is taken along line13—13 in FIG. 19 at a processing point just after the patterning ofphotoresist material 69 (FIG. 13) with layout 88. Layout 89 enablescapacitors having unique, space-saving geometries to be formed over thesubstrate. According to a preferred aspect of the invention, theelectrically insulative partitions 78, 80 (FIG. 16) are formed betweenadjacent capacitors intermediate the two etching steps which form ordefine the areas over the substrate in which the capacitors will beformed. The partitions 78, 80 are not shown for clarity in FIG. 19.

Mask layout 88 includes a plurality of rows such as those illustrated atR₁, R₂, R₃, and R₄. The mask layout also includes a plurality of columnssuch as those illustrated at C₁, C₂, C₃, C₄, C₅, C₆, and C₇. A pluralityof masked areas 90 and a plurality of adjacent unmasked areas 92 aredefined by the layout. Unmasked areas 92 correspond to capacitorcontainer opening patterns 68 in FIG. 13 and masked areas 90 correspondto photoresist material 69. Layout 88 enables a plurality of capacitorsto be formed, preferably as part of a DRAM array over the substrate,wherein respective alternate capacitors in a row, such as rows R₁-R₄have substantially similar lateral width profiles transverse the row.Preferably, respective adjacent capacitors in a row have differentlateral width profiles transverse the row. The illustrated and preferredlateral width profiles when viewed from a point above the substrateapproximate triangles which are oriented in a top-to-bottom fashionacross the row. Additionally, individual defined areas in which thepreferred capacitor pairs are to be formed (corresponding to the viewtaken along line 13—13 in column C₅) approximate a diamond shape withsuch shape having at its respective corners, bit line contacts 94 whichare formed as described above. For purposes of the ongoing discussion,each of columns C₁-C₇ are formed along a generally straight line whichis generally transverse each of rows R₁-R₄. Further, the array ofcapacitor pairs to be formed are formed along individual lines whichcontain at least one of the pairs of capacitors. As such, the array isdefined by a plurality of the lines (corresponding to the plurality ofthe columns) which contain a plurality of capacitors which are separatedby substantially no more than an electrically insulative anisotropicallyetched spacer as described above. Underlying word lines are shown bydashed lines 93 and interconnect associated transistors formed relativeto the substrate. Individual bit lines are not specifically shown butare subsequently formed and oriented generally transversely relative toword lines 93.

Referring to FIG. 20, mask layout 88 defines in part a DRAM array whichincludes a plurality of six-capacitor geometries which are to be formedover the substrate. A representative of one of the geometries isindicated generally by reference numeral 96 and a plurality of adjacentor other geometries are shown in phantom lines. The illustrated andpreferred six-capacitor geometries are, in turn, defined by a pluralityof individual polygonal capacitor geometries shown collectively at 98through 108. Preferably, collective individual capacitor geometries 98through 108 approximate a hexagon individual sides of which are definedby a side of a different respective one of the individual polygonalcapacitor geometries. For example, six-capacitor geometry or hexagon 96includes six sides collectively shown at 96 a, 96 b, 96 c, 96 d, 96 e,and 96 f. Each of such sides is defined by a different respective one ofthe individual sides of the individual polygonal capacitor geometries 98through 108. According to a preferred aspect of the invention,individual polygonal capacitor geometries 98 through 108, when viewedoutwardly of the substrate approximate a wedge or wedge-shape. Even morepreferably, such individual geometries approximate a triangle which,most preferably, is an isosceles triangle. Further, individualapproximated isosceles triangles include equal adjacent angles θ whichapproximate a range of between about 50° to 70°. Such equal adjacentangles are shown for individual geometries 100, 104, and 108. Even morepreferably, such equal adjacent angles approximate an angle of about65°. Individual geometries 98 through 102 and 104 through 108respectively, are preferably arranged in a top-to-bottom orientationsuch that hexagon 96 can be bisected, as by dashed line 110, into halveswhich contain exactly three individual polygonal capacitor geometries.In the illustrated and preferred hexagon, one of the halves, a top halfas viewed in FIG. 20 contains individual geometries 98, 100, and 102.The other of the halves, a bottom half, contains geometries 104, 106,and 108.

Referring to FIG. 21, the top half containing geometries 98, 100, and102 is shown. Such comprises a three-capacitor geometry 112, a pluralityof which are disposed over the substrate. Preferably, three-capacitorgeometry 112, when viewed outwardly of the substrate defines a pair ofoverlapping approximated parallelograms, the intersection of whichapproximates a triangle. The first of such parallelograms is shown at114. The second of such parallelograms is shown at 116. Parallelogram114 includes sides 114 a, 114 b, 114 c, and 114 d. Parallelogram 116includes sides 116 a, 116 b, 116 c, and 116 d. The parallelograms sharesides 114 b and 116 d. As shown, each approximated parallelogram isbounded at a respective one of its corners by a bit line contact 94. Theapproximated triangle defined by the intersection of parallelograms 114,116 includes sides 114 c, 116 c and shared sides 114 b/116 d. Forpurposes of ongoing discussion, a plurality a of capacitor pairs areselectively and alternately etched over the substrate along etch axeswhich are generally orthogonal relative to the substrate and into theplane of the page upon which FIG. 21 appears. Such capacitor pairs canapproximate the above described parallelogram and would include theindividual capacitors etched as a result of individual geometries 98,100, or alternatively 100, 102.

Referring to both FIGS. 16 and 19, a DRAM array is formed atop asubstrate and includes a first set of capacitors formed in first setcapacitor openings 70 over the substrate. A second set of capacitors areformed over the substrate and in second set capacitor openings 82.Individual capacitors of the first set are bounded by at least threecapacitors from the second set (FIG. 19). Preferably, individual firstset capacitors have a closest separation distance from at least one ofthe three bounding capacitors which is substantially no more than awidth of an electrically insulative anisotropically etched spacer. Onesuch width is indicated in FIG. 16 at 80. Even more preferably,individual bounded first set capacitors have closest separationdistances from no less than two and preferably three of the boundingcapacitors which are no more than the width of an electricallyinsulative anisotropically etched spacer formed or provided between therespective capacitors.

The above described semiconductor device forming methods and integratedcircuitry formed thereby constitute an improvement which relates todevice spacing over a substrate. Such improvement enables device pitchto be reduced by almost fifty percent or more which represents, asubstantial space savings over heretofore available methods and devices.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A DRAM capacitor forming method comprising thesteps of: providing a material over a substrate; etching a firstcapacitor container opening into the material, the first containeropening having at least one upright sidewall; forming an electricallyinsulative spacer on the upright sidewall; selectively etching a secondcapacitor container opening into the material adjacent the formedspacer; forming capacitors in the capacitor containers, adjacentcapacitors having a separation distance therebetween which issubstantially no greater than the width of the spacer between theadjacent capacitors; and wherein individual capacitor containers aretriangularly shaped when viewed from a point above the substrate.
 2. Themethod of claim 1 wherein forming the spacer comprises forming anelectrically insulative layer within the first opening and over thematerial, and anisotropically etching the insulative layer to form thespacer.
 3. The method of claim 1 wherein forming the spacer comprisesforming the spacer from silicon nitride.
 4. The method of claim 1wherein forming the spacer comprises forming the spacer to have adifferent composition than the material over the substrate.
 5. A DRAMcapacitor forming method comprising: providing a material over asubstrate: etching a first capacitor container opening into thematerial, the first container opening having at least one uprightsidewall; forming an electrically insulative spacer on the uprightsidewall; selectively etching a second capacitor container opening intothe material adjacent the formed spacer; forming capacitors in thecapacitor containers, adjacent capacitors having a separation distancetherebetween which is substantially no greater than the width of thespacer between the adjacent capacitors; and wherein individual capacitorcontainers are triangularly shaped when viewed from a point above thesubstrate wherein the spacer comprises silicon nitride and the materialover the substrate comprises BPSG.